Secondary ion mass spectrometry (SIMS) is a technique for the characterization of solid surfaces and thin films. It uses the process of ion formation by bombarding the surface to be tested with a highly collimated beam of primary ions. The surface then emits material through a sputtering process - only a fraction of these emitted particles is ionized.
Sector instrument Time-of-flight Quadrupole mass analyzer Sputtering Duoplasmatron Microprobe SHRIMP Detection limit Faraday cup Ion beam Fast atom bombardment Electron multiplier Electron ionization Microchannel plate detector Mean free path Vacuum pump Rosetta (spacecraft) Sulfur hexafluoride Thin film Moon rock University of Münster Adsorption Fullerene J. J. Thomson Indium Noble gas Fluorescence Bismuth Xenon Argon Cubic centimetre University of Vienna Kinetic energy Mass spectrometry Vacuum Tungsten Bar (unit) Melting point Gold Oxygen
